All Rights Reserved. In such a case, minimizing within-die pattern effects and implementing within-wafer and wafer to-wafer temperature control becomes very important. Executive-level communication, Ghost Writing: Speak with Bhavik Vasha, VP of Quality at Veeco San Jose about the Quality Checkup. Over the last decade, new process technologies and materials have emerged, such as strained silicon, high-k/metal gate (HKMG) and advanced silicide. 274 0 obj <>stream Figure . Schematic of the experimental setup for R C measurements via laser spike annealing. The following science pages will show how X-rays have become a mainstream tool for examining the structure and function of our material world, with an eye towards designing new materials, solving technological problems, and even curing diseases. To manage ever-tightening thermal budgets critical to device performance, we developed diffusionless super activation. Some features of this site may not work without it. www.laserfocusworld.com is using a security service for protection against online attacks. investigated spike time-dependent plasticity on 200-nm Al 2 O 3 /TiO 2x memristors integrated into 12 12 crossbars . Focus on Laser Spike Annealing & AP Lithography tools. FIGURE 2 compares the temperature (T) profiles between laser and flash systems for the same peak surface temperature (Tpk) and dwell time (tdwell defined as the full-width-half-maximum duration when a fixed point on the wafer sees the laser beam or flash pulse). 0000004877 00000 n Abstract: Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineeringcreating highly activated ultra-shallow junctions with near diffusion-less boundaries. Building devices at advanced process nodes to meet the needs of the digital transformation means taking a close look at processes every step of the way. Three large absorption bands due to the optical transitions between spike-like d. of states, characteristics of . 442 0 obj <> endobj We place cookies on your device to give you the best user experience. Weve been teetering on the brink of digital transformation for a while, and the COVID-19 pandemic pushed us right over the edge. Visit Ultratech online at: www.ultratech.com. xSkHSa~]Nkc8`ek65QiC~IABq:,3VS)Zaob7K%4L~r>y} O ZX4-HW2|]HO*6k@WEn9~l+)c/S-?B#'8B*WxrJ~axb&gxHA[C&DT4n:&[~6(QJ]Xu:{^s};_3]-QAZ2k\*ZN|WyVf@6'$joA =xY)Q99CE7,[y}bi5Lr9q4lo|}U5uyr)Fga!QF)VlTsC7X;]LhzpKx+`)&ldV{IIHblKeag+7dNBS]na !ANXF The disclosure is directed to laser spike annealing using fiber lasers. 0000000696 00000 n Laser annealing is very different from other laser marking mechanisms readLaser Etching, Engraving & Annealing: What'sthe Difference? It also leads to lower leakage and improved yields. 0000000656 00000 n Close. (KrF) laser beam with a pulse duration of 38 ns. The thickness of the internal oxide layer is determined by the highest temperature reached by the surface of the metal during its heating; however, in most instances, it will remain below 3000 Ao (300nm). 0000005379 00000 n Laser spot for U ICP MS method for U-238 content . Goal is to outrun damage to the polymer by employing ultrafast heating and cooling rates. The metal begins to oxidize internally. (UTEK-G) SOURCE Ultratech, Inc. The same goes for advanced logic and memory architectures. for more on the subject. How to assure the process repeatability, uniformity and precise control focused laser beam to avoid overlaps . evolve into the spike structures that characterize black silicon (Fig. For laser spike annealing temperatures above 1000 C , mobility is found to degrade due to partial relaxation and dislocation formation in the Si _0.3 Ge _0.7 channel. Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. A second reflection occurs when the light transmitted through the oxidized layer hits the unmodified substrate. In advanced FinFET flow where contacts are formed after source/drain activation and gate stack, low thermal budget process is beneficial to minimize dopant deactivation and unintentional gate work function shift. Lower leakage and better surface morphology are also observed in hafnium-based, high-k films when annealed by a laser. 0000001279 00000 n Built on Veecos customizable Unity Platform, LSA 101s scanning technology delivers fundamental advantages in uniformity and low-stress processing. A modified scheme to tune the Schottky Barrier Height (SBH) of NiSi effectively by means of dopant segregation (DS) technique is presented. Goal is to outrun damage to the polymer by employing ultrafast heating and cooling rates. Spike annealing was performed in a Mattson RTP sys-tem with a maximum temperature of 1000 C-1050 C. Annealing is a thermal process used in the far front end of semiconductor device manufacturing to lower silicon resistance and activate dopants injected into crystalline layers for stress relaxation. Thermal annealing is necessary to repair implant damage and activate dopants in pre silicide implantation scheme, and to drive-in dopants in post silicide case. In conventional RTA, this requires T > 750C; such high T would lead to morphology degradation, excess diffusion, and higher resistivity. Laser technology has come a long way since the introduction of the first laser in 1960. Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. It has long been the process of record for most of the industrys foundries and IDMs for high-performance logic devices due to its unique hardware configuration and real-time process control capability. For As, concentration enhanced diffusion is observed but can be reduced with short dwell time. For example, memory manufacturers have started using LSA for DRAM applications, because they are facing the same challenges as logic manufacturers. The inset is rescaled to highlight the Hence a single laser spike annealed trace provides a cross section of the thermal history of the annealing process. Under LSA, the activation of highdose implanted dopants was increased in both InGaAs and GaN to peak concentrations comparable (>80%) to the as-implanted dose. %PDF-1.4 % Typical temperature programs for spike and ash annealing are shown in Figs. The European semiconductor equipment market is expected to grow along with the world market. LSA is also compatible with new materials such as strained Si, SiGe, high-k and metal gates, and is extendable to new device structures.1. With MSA, because of the short duration, agglomeration does not occur until ~900C. The peak intensity and width are indicators for the quality of ordering attained during laser spike annealing. The full width at half maximum of the laser trace is about mm wide, and can thus be resolved spatially with the x-ray microbeam of 15 m (Figure 1b). Meanwhile transistor structures have evolved significantly, from bulk planar and PDSOI to 3D FinFET. xref "The other thing that is critical to device fabrication is that the junctions have to be more abrupt," Talwar said. It uses coherent optics to generate a longer, more focused laser beam at the wafer plane, increasing throughput by approximately 200% compared to its predecessor, the LSA100A. For example, studies on SiGe/Si heterostructures have shown that MSA can enable a higher annealing temperature than RTA, without strain relaxation or structural degradation. There are two main approaches to annealing; one is the traditional lamp-based approach, and the other is LSA, a more advanced option. Since the thermal stress is localized, the backside can be chucked to facilitate heat sinking. Laser Spike Anneal (LSA) technology combines a continuous-wave (CW) laser with projection optics and active beam feedback controls (uniformity, temperature, dwell time) to enable the ultra shallow junction formation. The difference between lamp-based and laser-based annealing is a process that can be performed in nanoseconds vs. milliseconds. The study shows that both disordering (Figure 3a) and ordering (Figure 3b) can be kinetically suppressed at sub-millisecond timescales. For the first time, nonmelt submillisecond laser spike annealing (LSA) is demonstrated to achieve high activation level, excellent diffusion control, and resulting low contact resistivity for both n-type and p-type Ge junctions when using P and B as the dopants, respectively. Alternatively, LSA uses a single narrow laser beam to heat the wafer surface from substrate temperature to the peak annealing temperature. In addition to the traditional dopant activation and impurity profile control, MSA can also be used for interface engineering and material property modifications (structural, electrical, chemical, and mechanical). When developing a laser processing system, the motio, Camera range available with a microlens option, Wearable device promises easier glucose monitoring, Four-axes stages suited for laser scanning, drilling, and machining, Handheld aluminum analyzers use laser-induced breakdown spectroscopy, Electron photodetector offers electron responsivity down to 100 eV. By YUN WANG, Ph.D., Ultratech, San Jose, CA. In addition, LSA using multiple beams, which can control the depth of the activation area by using different wavelengths, is also being actively studied to anneal the confined area . Annealing in metallurgy, and material science, is a heat treatment wherein, a material is altered, causing a change in its properties such as strength, and hardness. Peak temperatures in the laser trace were chosen to be close or above the order-disorder temperature of the block copolymer. Tpk = 1200C, dwell time = 10ms, preheat T = 800C for flash. Adobe d 0000002147 00000 n The main color of the metal is given by the wavelength for which the interference between the two waves is perfectly constructive. 0000000016 00000 n As the metal is heated, oxygen is diffused below the surface. Laser Spike Annealing for FinFETs Jeff Hebb, Ph.D. Julyy, 11, 2013 1 NVVAVS West Coast JunctionTechnology Group Meeting July 11, 2013. 18, 697701 (2011). With laser annealing, it is possible to color the surface of very specific metals: Laser annealing is very different from other laser marking mechanisms read, Basic Principles of Laser Annealing - Thin Film Interference, Figure 1 - Thin film interference (transmission and reflections), A first reflection occurs when ambient light rays hit the, Looking at the metal, you can see the light that is coming towards you as a superposition of the, Figure 2 -Constructive and desctructive interference, Figure 3 - Thin film interference (absorption), Figure 4 -Different colors achieved with laser annealing on a stainless steel sample, Laser Annealing of Stainless Steel: Typical Applications, These properties are assured by the presence of a layer of, Even if some of the chromium oxides is scratched off, a new layer of chromium oxide will form, maintaining the metals, Laser Annealing Can Be Usedfor Industrial Applications, 7 Considerations Before Laser Engraving Metals, How to Choose the Best Marking Technology, Laser Markers vs Dot Peen Marking Machines: What to Choose and Why. The two waves interfere either constructively or destructively, giving a particular color to the metal. In general, if a desired process has higher thermal activation energy than an undesired process, application of high temperature, short duration annealing is beneficial. Manufacturers who need permanent markings for traceability typically have two options: dot peen marking or laser marking. "The numbers that are required at this point are in the 100- to 300- range. 0000001819 00000 n S/D anneal: Higher activation, improved NMOS strain 442 20 2023 Endeavor Business Media, LLC. Laser annealing consists of the slow heating of metals with a laser beam. The full width at half maximum of the laser trace is about mm wide, and can thus be resolved spatially with the x-ray microbeam of 15 m (Figure 1b). The term "amplification conditions", as used herein, refers to conditions that promote annealing and/or extension of primer sequences. 0000019967 00000 n ~Ot2_'x:&T(i Nx[,9;KeB2|556g8]ci[5C;O - Do not disrupt already-fabricated devices lying beneath the fresh Si layer Issues. FIGURE 4. - Thermal stress. Hence heat dissipation occurs only in one dimension (1D vertical direction). Copyright 2023 Veeco Instruments Inc. All Rights Reserved. startxref Approach. ), or their login data. This opens new opportunities for short time scale annealing. Based on laser-annealing technology developed at Stanford University (Stanford, CA) and Lawrence Livermore National Laboratory (Livermore, CA), engineers at Ultratech Stepper (San Jose, CA) have progressed to an alpha product level in a tool to fabricate significantly shallower and more abrupt transistor junctions than are currently available through rapid thermal processing (RTP). But as for a simple scratch, a new passivated layer will be created spontaneously, thereby preserving the stainless steel from further deterioration. The modulus and hardness of the low-k films can be improved without adversely impacting the k value using MSA. Below the 10nm technology node, new materials with enhanced transportation, such as SiGe/Ge and III-V compounds, may be needed to meet the performance requirements. [1] Alan G. Jacobs, Clemens Liedel, Hui Peng, Linxi Wang, Detlef-M. Smilgies, Christopher K. Ober, and Michael O. Thompson, Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing, Macromolecules 49, 64626470 (2016). "We take the pseudo-Gaussian beam that comes out of the laser and we shape it into a rectangle with extremely good uniformity throughout," Talwar said. 2017Nov 1 - Dec 21 With the laser system the polymer can be heated way past the temperature at which the polymer would decay if held at that temperature long enough. Previously thought impractical for semiconductor-scale manufacturing applications, laser annealing is likely to take on a key role as the semiconductor industry proceeds toward sub-100-nm feature sizes, according to Somit Talwar, who described the technology in July at the Semicon West exhibition in San Francisco, CA (see figure). Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope. Laser texturing can enhance optical density through excellent light trapping as shown in Figure 1 [3]. 0000004641 00000 n Temperature profiles were carefully calibrated in the lab for different laser power levels and dwell times. A picture of the promising performance in terms of laser anneal for dopant activation is illustrated in Fig. Peak temperatures in the laser trace were chosen to be close or above the order-disorder temperature of the block copolymer. The user team acquired close to 100,000 images on a fast Pilatus 200k detector corresponding to 3 sample materials with ~40 laser traces each. Once cooled off, you are able to observe a change in the color of the metal. 0000003863 00000 n Essentially, the temperature has to be high enough to activate the dopants, but not too high to overheat the device. tion. ", Laser-annealing technology is about four decades old, but was generally considered to be incapable of handling the spatial nonuniformities on a semiconductor wafer full of varying device geometries. Figure 1: (a) Laser spike annealing procedure and (b) microbeam GIXAXS characterization of the polymer film within an annealed trace. Long dwell time (2~40ms) adds more thermal budget for defect curing. This allows for a uniform distribution of dopant within the junction, exceeding the RTP solubility limit and decreasing electrical resistance in the junctions by an order of magnitude. Our dual-beam technology was designed to eliminate the need for dopant deactivation. This book offers after an historical excursus selected contributions on fundamental and applied aspects of thermal processing of classical elemental semiconductors and other advanced materials including nanostructures with novel . The spike anneal using Ar arc lamp has been demonstrated. To better understand the annealing windows, we developed an insitu characterization technique which matches well with laser annealing for combinatorial and highthroughput characterization; this capability significantly enhances the characterization kinetic dopant activation limitations of IIIV and IIIN materials. Specifically, the initial starting state is retained to extreme temperatures as polymer motion is suppressed. 0 . 0000002069 00000 n SAN JOSE, Calif., Oct. 22, 2012 /PRNewswire/ -- Ultratech, Inc. (Nasdaq: UTEK ), a leading supplier of lithography and laser-processing systems used to . 9 From the practical point of view, the laser-based annealing technique has difficulties in uniform heating of large areas. Outline . Alan Jacobs from Mike Thompsons group and Clemens Liedel from Chris Obers group, both at the Department of Materials Science and Engineering, brought samples to CHESS D1 station for a detailed analysis of laser annealed traces. Comparison of simulated temperature profiles between long dwell laser and flash annealing. This process is automatic. The thermal . The Infona portal uses cookies, i.e. Another important point in the temperature profile is the point where the temperature surpasses the glass temperature of the polymer and polymer chains become mobile. 2018Apr 11 - Jun 4 \Ik.8p2h0,`j R3\s1aqfL\ *t60O!_|AA@0205e 3 a Nanosecond transient absorption (TA) spectroscopy was . In fact, we are the only solution provider that delivers all advanced anneal requirements. Ultratech, Inc. Laser spike annealing and its application to leading-edge logic devices, Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2. Post nitridation anneal with MSA provides opportunities to stabilize the film with a more precisely controlled nitrogen profile, which is important since excessive nitrogen diffusion can increase interface trap and leakage. 0000001700 00000 n *wu`:ILI$I%)$IJI$RI$S4\zA|SI%)$IJI$R8L AL +@S]6Xa.>BSIvb_GV}wk^~3w_C(w\Q_ %)Z]u|66}lye|M:D5A}4W{f.R`tk+#3"\6 ti_R*OM$YYT j2Bcpi5]:XMcu0. The junction depth, abruptness and resistance offered by each approach are balanced against device uniformity, deactivation and leakage. In this regime, significant advantages have been shown in applications of ultra-shallow junction formation in ion-implanted IIIV and IIIN semiconductor materials. The technique is currently being considered for adoption by SRC members, including IBM Corp., Texas . <]>> However, typical thermal annealing is slow, and polymers may degrade at high annealing temperature. A key advantage of LSA is its broad scalability and adaptability for different applications. Please enable JavaScript on your browser and try again. Y. Wang, S. Chen, M. Shen, et al. The colored look of the metal that has been processed through laser annealing can be explained by the thin-film interference phenomenon. In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. Please enable cookies on your browser and try again. Detlef Smilgies, CHESS and Alan Jacobs, Cornell University. Between dot peening, inkjet printing, laser marking, and printed labels, the right solution is not always obvious. annealing (Fig. Veeco's leading laser spike annealing (LSA) technology is a key differentiator for leading semiconductor manufacturers due to its low thermal budget, Liked by Kui Lin. It is a process that produces conditions by heating, and maintaining a suitable temperature, and then cooling. Laser spike annealing is a high-temperature (above 1300 C) heat treatment technique that activates the dopants in GaN and repairs damage done during the implantation process. (NIRvana 640ST, Princeton Instruments, 512 640 pixels). <]>> Lamp based is a simple, slow process that uses white light to apply heat in on/off stages to bare silicon. 4.9 [56], comparing the active dopant concentration for a highly doped 40-nm Si:P epitaxial layer (4.6% P content, i.e., 2.3 10 21 cm 3) for various annealing approaches, namely, epi (as reference without anneal), spike annealing . Within this profile the polymer film reaches different peak temperatures, and the sweeping speed determines the dwell time at a specific temperature. YUN WANG, Ph.D., is Senior Vice President and Chief Technologist of Laser Processing Ultratech, San Jose, CA. You will be redirected once the validation is complete. R. Colin Johnson, Laser-spike annealing could boost litho, EE Times, October 2012. https://www.eetimes.com/laser-spike-annealing-could-boost-litho/. 461 0 obj <>stream The METHODS FOR OVERLAY IMPROVEMENT THROUGH FEED FORWARD CORRECTION patent was assigned a Application Number # 13906955 - by the United States Patent and Trademark Office (USPTO). [1] Alan G. Jacobs, Clemens Liedel, Hui Peng, Linxi Wang, Detlef-M. Smilgies, Christopher K. Ober, and Michael O. Thompson, Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing, Macromolecules 49, 64626470 (2016).